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STF24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 17 A MDmeshTM II Power MOSFET , TO-220FP, TO-220 and TO-247 Features VDSS RDS(on) Order codes ID (@Tjmax) max. STF24NM60N 650 V < 0.19 17 A 3 3 2 2 STP24NM60N 650 V < 0.19 17 A 1 1 TO-220FP TO-220 STW24NM60N 650 V < 0.19 17 A 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-247 Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STF24NM60N TO-220FP STP24NM60N 24NM60N TO-220 Tube STW24NM60N TO-247 July 2011 Doc ID 18047 Rev 2 1/17 www.st.com 17 Contents STF24NM60N, STP24NM60N, STW24NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 9 4 Package mechanical data